Loading…
Electrophobic interaction induced impurity clustering in metals
We introduce the concept of electrophobic interaction, analogous to hydrophobic interaction, for describing the behavior of impurity atoms in a metal, a “solvent of electrons”. We demonstrate that there exists a form of electrophobic interaction between impurities with closed electron shell structur...
Saved in:
Published in: | Acta materialia 2016-10, Vol.119, p.1-8 |
---|---|
Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c416t-7f10a787c488831d14da9b289f2ee50fe4d4aac91f5b0c8add7d77328b4a38e3 |
---|---|
cites | cdi_FETCH-LOGICAL-c416t-7f10a787c488831d14da9b289f2ee50fe4d4aac91f5b0c8add7d77328b4a38e3 |
container_end_page | 8 |
container_issue | |
container_start_page | 1 |
container_title | Acta materialia |
container_volume | 119 |
creator | Zhou, Hong-Bo Wang, Jin-Long Jiang, W. Lu, Guang-Hong Aguiar, J.A. Liu, Feng |
description | We introduce the concept of electrophobic interaction, analogous to hydrophobic interaction, for describing the behavior of impurity atoms in a metal, a “solvent of electrons”. We demonstrate that there exists a form of electrophobic interaction between impurities with closed electron shell structure, which governs their dissolution behavior in a metal. Using He, Be and Ar as examples, we predict by first-principles calculations that the electrophobic interaction drives He, Be or Ar to form a close-packed cluster with a clustering energy that follows a universal power-law scaling with the number of atoms (N) dissolved in a free electron gas, as well as W or Al lattice, as Ec ∝ (N2/3−N). This new concept unifies the explanation for a series of experimental observations of close-packed inert-gas bubble formation in metals, and significantly advances our fundamental understanding and capacity to predict the solute behavior of impurities in metals, a useful contribution to be considered in future material design of metals for nuclear, metallurgical, and energy applications.
[Display omitted] |
doi_str_mv | 10.1016/j.actamat.2016.08.005 |
format | article |
fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1313603</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S1359645416305833</els_id><sourcerecordid>1835564452</sourcerecordid><originalsourceid>FETCH-LOGICAL-c416t-7f10a787c488831d14da9b289f2ee50fe4d4aac91f5b0c8add7d77328b4a38e3</originalsourceid><addsrcrecordid>eNqFkE9LxDAQxYsouK5-BKF48tKaNEmbnhZZ1j-w4GXvIU2mbpa2qUkq7Lc3pXv3NDPMm8ebX5I8YpRjhMuXUy5VkL0MeRHHHPEcIXaVrDCvSFZQRq5jT1idlZTR2-TO-xNCuKgoWiWbXQcqODsebWNUaoYALroZO8ReTwp0avpxciacU9VNPq7N8B13aQ9Bdv4-uWljgYdLXSeHt91h-5Htv94_t6_7TFFchqxqMZIVrxTlnBOsMdWybgpetwUAQy1QTaVUNW5ZgxSXWle6qkjBGyoJB7JOnhZb64MRXpkA6qjsMMTwAhNMSkSi6HkRjc7-TOCD6I1X0HVyADt5gTlhrKSUFVHKFqly1nsHrRid6aU7C4zEDFWcxAWqmKEKxEWEGu82yx3EX38NuDkLDBGTcXMUbc0_Dn_ri4M9</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1835564452</pqid></control><display><type>article</type><title>Electrophobic interaction induced impurity clustering in metals</title><source>Elsevier</source><creator>Zhou, Hong-Bo ; Wang, Jin-Long ; Jiang, W. ; Lu, Guang-Hong ; Aguiar, J.A. ; Liu, Feng</creator><creatorcontrib>Zhou, Hong-Bo ; Wang, Jin-Long ; Jiang, W. ; Lu, Guang-Hong ; Aguiar, J.A. ; Liu, Feng ; National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><description>We introduce the concept of electrophobic interaction, analogous to hydrophobic interaction, for describing the behavior of impurity atoms in a metal, a “solvent of electrons”. We demonstrate that there exists a form of electrophobic interaction between impurities with closed electron shell structure, which governs their dissolution behavior in a metal. Using He, Be and Ar as examples, we predict by first-principles calculations that the electrophobic interaction drives He, Be or Ar to form a close-packed cluster with a clustering energy that follows a universal power-law scaling with the number of atoms (N) dissolved in a free electron gas, as well as W or Al lattice, as Ec ∝ (N2/3−N). This new concept unifies the explanation for a series of experimental observations of close-packed inert-gas bubble formation in metals, and significantly advances our fundamental understanding and capacity to predict the solute behavior of impurities in metals, a useful contribution to be considered in future material design of metals for nuclear, metallurgical, and energy applications.
[Display omitted]</description><identifier>ISSN: 1359-6454</identifier><identifier>EISSN: 1873-2453</identifier><identifier>DOI: 10.1016/j.actamat.2016.08.005</identifier><language>eng</language><publisher>United States: Elsevier Ltd</publisher><subject>Aluminum ; Clustering ; Clusters ; Electrophobic interaction ; Energy use ; Hydrophobicity ; Impurities ; Impurity clustering ; MATERIALS SCIENCE ; Mathematical analysis ; Metals ; Solvents</subject><ispartof>Acta materialia, 2016-10, Vol.119, p.1-8</ispartof><rights>2016 Acta Materialia Inc.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c416t-7f10a787c488831d14da9b289f2ee50fe4d4aac91f5b0c8add7d77328b4a38e3</citedby><cites>FETCH-LOGICAL-c416t-7f10a787c488831d14da9b289f2ee50fe4d4aac91f5b0c8add7d77328b4a38e3</cites><orcidid>0000-0003-4662-927X ; 000000034662927X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1313603$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhou, Hong-Bo</creatorcontrib><creatorcontrib>Wang, Jin-Long</creatorcontrib><creatorcontrib>Jiang, W.</creatorcontrib><creatorcontrib>Lu, Guang-Hong</creatorcontrib><creatorcontrib>Aguiar, J.A.</creatorcontrib><creatorcontrib>Liu, Feng</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><title>Electrophobic interaction induced impurity clustering in metals</title><title>Acta materialia</title><description>We introduce the concept of electrophobic interaction, analogous to hydrophobic interaction, for describing the behavior of impurity atoms in a metal, a “solvent of electrons”. We demonstrate that there exists a form of electrophobic interaction between impurities with closed electron shell structure, which governs their dissolution behavior in a metal. Using He, Be and Ar as examples, we predict by first-principles calculations that the electrophobic interaction drives He, Be or Ar to form a close-packed cluster with a clustering energy that follows a universal power-law scaling with the number of atoms (N) dissolved in a free electron gas, as well as W or Al lattice, as Ec ∝ (N2/3−N). This new concept unifies the explanation for a series of experimental observations of close-packed inert-gas bubble formation in metals, and significantly advances our fundamental understanding and capacity to predict the solute behavior of impurities in metals, a useful contribution to be considered in future material design of metals for nuclear, metallurgical, and energy applications.
[Display omitted]</description><subject>Aluminum</subject><subject>Clustering</subject><subject>Clusters</subject><subject>Electrophobic interaction</subject><subject>Energy use</subject><subject>Hydrophobicity</subject><subject>Impurities</subject><subject>Impurity clustering</subject><subject>MATERIALS SCIENCE</subject><subject>Mathematical analysis</subject><subject>Metals</subject><subject>Solvents</subject><issn>1359-6454</issn><issn>1873-2453</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqFkE9LxDAQxYsouK5-BKF48tKaNEmbnhZZ1j-w4GXvIU2mbpa2qUkq7Lc3pXv3NDPMm8ebX5I8YpRjhMuXUy5VkL0MeRHHHPEcIXaVrDCvSFZQRq5jT1idlZTR2-TO-xNCuKgoWiWbXQcqODsebWNUaoYALroZO8ReTwp0avpxciacU9VNPq7N8B13aQ9Bdv4-uWljgYdLXSeHt91h-5Htv94_t6_7TFFchqxqMZIVrxTlnBOsMdWybgpetwUAQy1QTaVUNW5ZgxSXWle6qkjBGyoJB7JOnhZb64MRXpkA6qjsMMTwAhNMSkSi6HkRjc7-TOCD6I1X0HVyADt5gTlhrKSUFVHKFqly1nsHrRid6aU7C4zEDFWcxAWqmKEKxEWEGu82yx3EX38NuDkLDBGTcXMUbc0_Dn_ri4M9</recordid><startdate>20161015</startdate><enddate>20161015</enddate><creator>Zhou, Hong-Bo</creator><creator>Wang, Jin-Long</creator><creator>Jiang, W.</creator><creator>Lu, Guang-Hong</creator><creator>Aguiar, J.A.</creator><creator>Liu, Feng</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0003-4662-927X</orcidid><orcidid>https://orcid.org/000000034662927X</orcidid></search><sort><creationdate>20161015</creationdate><title>Electrophobic interaction induced impurity clustering in metals</title><author>Zhou, Hong-Bo ; Wang, Jin-Long ; Jiang, W. ; Lu, Guang-Hong ; Aguiar, J.A. ; Liu, Feng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c416t-7f10a787c488831d14da9b289f2ee50fe4d4aac91f5b0c8add7d77328b4a38e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Aluminum</topic><topic>Clustering</topic><topic>Clusters</topic><topic>Electrophobic interaction</topic><topic>Energy use</topic><topic>Hydrophobicity</topic><topic>Impurities</topic><topic>Impurity clustering</topic><topic>MATERIALS SCIENCE</topic><topic>Mathematical analysis</topic><topic>Metals</topic><topic>Solvents</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Hong-Bo</creatorcontrib><creatorcontrib>Wang, Jin-Long</creatorcontrib><creatorcontrib>Jiang, W.</creatorcontrib><creatorcontrib>Lu, Guang-Hong</creatorcontrib><creatorcontrib>Aguiar, J.A.</creatorcontrib><creatorcontrib>Liu, Feng</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>OSTI.GOV</collection><jtitle>Acta materialia</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Hong-Bo</au><au>Wang, Jin-Long</au><au>Jiang, W.</au><au>Lu, Guang-Hong</au><au>Aguiar, J.A.</au><au>Liu, Feng</au><aucorp>National Renewable Energy Lab. (NREL), Golden, CO (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrophobic interaction induced impurity clustering in metals</atitle><jtitle>Acta materialia</jtitle><date>2016-10-15</date><risdate>2016</risdate><volume>119</volume><spage>1</spage><epage>8</epage><pages>1-8</pages><issn>1359-6454</issn><eissn>1873-2453</eissn><abstract>We introduce the concept of electrophobic interaction, analogous to hydrophobic interaction, for describing the behavior of impurity atoms in a metal, a “solvent of electrons”. We demonstrate that there exists a form of electrophobic interaction between impurities with closed electron shell structure, which governs their dissolution behavior in a metal. Using He, Be and Ar as examples, we predict by first-principles calculations that the electrophobic interaction drives He, Be or Ar to form a close-packed cluster with a clustering energy that follows a universal power-law scaling with the number of atoms (N) dissolved in a free electron gas, as well as W or Al lattice, as Ec ∝ (N2/3−N). This new concept unifies the explanation for a series of experimental observations of close-packed inert-gas bubble formation in metals, and significantly advances our fundamental understanding and capacity to predict the solute behavior of impurities in metals, a useful contribution to be considered in future material design of metals for nuclear, metallurgical, and energy applications.
[Display omitted]</abstract><cop>United States</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.actamat.2016.08.005</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-4662-927X</orcidid><orcidid>https://orcid.org/000000034662927X</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1359-6454 |
ispartof | Acta materialia, 2016-10, Vol.119, p.1-8 |
issn | 1359-6454 1873-2453 |
language | eng |
recordid | cdi_osti_scitechconnect_1313603 |
source | Elsevier |
subjects | Aluminum Clustering Clusters Electrophobic interaction Energy use Hydrophobicity Impurities Impurity clustering MATERIALS SCIENCE Mathematical analysis Metals Solvents |
title | Electrophobic interaction induced impurity clustering in metals |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T02%3A33%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrophobic%20interaction%20induced%20impurity%20clustering%20in%20metals&rft.jtitle=Acta%20materialia&rft.au=Zhou,%20Hong-Bo&rft.aucorp=National%20Renewable%20Energy%20Lab.%20(NREL),%20Golden,%20CO%20(United%20States)&rft.date=2016-10-15&rft.volume=119&rft.spage=1&rft.epage=8&rft.pages=1-8&rft.issn=1359-6454&rft.eissn=1873-2453&rft_id=info:doi/10.1016/j.actamat.2016.08.005&rft_dat=%3Cproquest_osti_%3E1835564452%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c416t-7f10a787c488831d14da9b289f2ee50fe4d4aac91f5b0c8add7d77328b4a38e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1835564452&rft_id=info:pmid/&rfr_iscdi=true |