Amphoteric Phosphorus Doping for Stable p-Type ZnO

The role of dislocations in stable p‐type phosphorus‐doped ZnO epitaxial films is investigated. It is shown that good p‐type conductivity is always associated with a considerable increase in the density of dislocations, which can aid the formation of shallow complex acceptors and provide sinks for n...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2007-10, Vol.19 (20), p.3333-3337
Main Authors: Allenic, A., Guo, W., Chen, Y. B., Katz, M. B., Zhao, G. Y., Che, Y., Hu, Z. D., Liu, B., Zhang, S. B., Pan, X. Q.
Format: Article
Language:English
Subjects:
Doping
materials
MATERIALS SCIENCE
semiconductor
Semiconductors
SOLAR ENERGY
Zinc oxide
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Summary:The role of dislocations in stable p‐type phosphorus‐doped ZnO epitaxial films is investigated. It is shown that good p‐type conductivity is always associated with a considerable increase in the density of dislocations, which can aid the formation of shallow complex acceptors and provide sinks for native donors.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200700083