Oxygen-Free Atomic Layer Deposition of Indium Sulfide

Atomic layer deposition (ALD) of indium sulfide (In2S3) films was achieved using a newly synthesized indium precursor and hydrogen sulfide. We obtain dense and adherent thin films free from halide and oxygen impurities. Self-limiting half-reactions are demonstrated at temperatures up to 225 °C, wher...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2014-08, Vol.6 (15), p.12137-12145
Main Authors: McCarthy, Robert F, Weimer, Matthew S, Emery, Jonathan D, Hock, Adam S, Martinson, Alex B. F
Format: Article
Language:English
Subjects:
Atomic layer deposition
in situ measurements
indium sulfide
indium(III) amidinate
photovoltaics
surface reactions
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Summary:Atomic layer deposition (ALD) of indium sulfide (In2S3) films was achieved using a newly synthesized indium precursor and hydrogen sulfide. We obtain dense and adherent thin films free from halide and oxygen impurities. Self-limiting half-reactions are demonstrated at temperatures up to 225 °C, where oriented crystalline thin films are obtained without further annealing. Low-temperature growth of 0.89 Å/cycle is observed at 150 °C, while higher growth temperatures gradually reduce the per-cycle growth rate. Rutherford backscattering spectroscopy (RBS) together with depth-profiling Auger electron spectroscopy (AES) reveal a S/In ratio of 1.5 with no detectable carbon, nitrogen, halogen, or oxygen impurities. The resistivity of thin films prior to air exposure decreases with increasing deposition temperature, reaching
ISSN:1944-8244
1944-8252
DOI:10.1021/am501331w