Persistent illumination-induced changes in polycrystalline TiO2 majority carrier concentration

In polycrystalline semiconductors for which grain boundaries mediate a persistent change in majority carrier concentration on super-bandgap photostimulation, the change generally involves an increase. Capacitance–voltage measurements on thin-film polycrystalline anatase TiO2 demonstrate a photostimu...

Full description

Saved in:
Bibliographic Details
Published in:Materials letters 2016-01, Vol.162 (C), p.20-23
Main Authors: Sellers, Meredith C.K., Seebauer, Edmund G.
Format: Article
Language:English
Subjects:
Anatase
Carrier concentration
Film thickness
Frozen
Grain boundaries
Grain boundary engineering
Majority carriers
Occupation
Photostimulation
Semiconductors
TiO2
Titanium dioxide
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites cdi_FETCH-LOGICAL-c361t-31626cf1329268c24de877b58b2f0be508ed09f18ab88c91253b351654beb4d73
container_end_page 23
container_issue C
container_start_page 20
container_title Materials letters
container_volume 162
creator Sellers, Meredith C.K.
Seebauer, Edmund G.
description In polycrystalline semiconductors for which grain boundaries mediate a persistent change in majority carrier concentration on super-bandgap photostimulation, the change generally involves an increase. Capacitance–voltage measurements on thin-film polycrystalline anatase TiO2 demonstrate a photostimulated increase or decrease in majority carrier concentration, depending on film thickness. With the help of photoreflectance measurements, the results are interpreted in terms of deep-gap energy states that reside near grain boundaries, whose charge occupation is “frozen in,” depending on synthesis history. Photostimulation provides the mechanism by which these states equilibrate with the band edges. •Carrier concentration, PR spectra acquired for thin-film polycrystalline anatase.•TiO2 shows persistent photostimulated changes in majority carrier concentration.•Carrier concentration rises or falls depending on film thickness.•Occupation of deep-gap states is “frozen in”, depending on synthesis history.•Photostimulation provides mechanism for carrier equilibration with band edges.
doi_str_mv 10.1016/j.matlet.2015.09.106
format article
fullrecord <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1359532</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167577X15306194</els_id><sourcerecordid>1778007274</sourcerecordid><originalsourceid>FETCH-LOGICAL-c361t-31626cf1329268c24de877b58b2f0be508ed09f18ab88c91253b351654beb4d73</originalsourceid><addsrcrecordid>eNp9kE1r3DAQhkVpodtt_0EPpqdcvNGHZUmXQAn5gkB6SCCnCFked7XI0lbSBvbfRxvn3NPA8MzLOw9CPwneEEz6891mNsVD2VBM-Aaruu0_oRWRgrWdEuozWlVMtFyI56_oW847jHGncLdCL38gZZcLhNI47w-zC6a4GFoXxoOFsbFbE_5Cblxo9tEfbTrmYrx3AZpH90Cb2exicuXYWJOSg9TYGGxNS-8x39GXyfgMPz7mGj1dXz1e3rb3Dzd3l7_vW8t6UlpGetrbiTCqaC8t7UaQQgxcDnTCA3AsYcRqItIMUlpFKGcD46Tn3QBDNwq2Rr-W3JiL09m6AnZbmwSwRRPGFWe0QmcLtE_x3wFy0bPLFrw3AeIhayKExFhQ0VW0W1CbYs4JJr1PbjbpqAnWJ-d6pxfn-uRcY1W3fT27WM6g_vpabZyqQPUxunRqMkb3_4A34hCNuw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1778007274</pqid></control><display><type>article</type><title>Persistent illumination-induced changes in polycrystalline TiO2 majority carrier concentration</title><source>Elsevier</source><creator>Sellers, Meredith C.K. ; Seebauer, Edmund G.</creator><creatorcontrib>Sellers, Meredith C.K. ; Seebauer, Edmund G.</creatorcontrib><description>In polycrystalline semiconductors for which grain boundaries mediate a persistent change in majority carrier concentration on super-bandgap photostimulation, the change generally involves an increase. Capacitance–voltage measurements on thin-film polycrystalline anatase TiO2 demonstrate a photostimulated increase or decrease in majority carrier concentration, depending on film thickness. With the help of photoreflectance measurements, the results are interpreted in terms of deep-gap energy states that reside near grain boundaries, whose charge occupation is “frozen in,” depending on synthesis history. Photostimulation provides the mechanism by which these states equilibrate with the band edges. •Carrier concentration, PR spectra acquired for thin-film polycrystalline anatase.•TiO2 shows persistent photostimulated changes in majority carrier concentration.•Carrier concentration rises or falls depending on film thickness.•Occupation of deep-gap states is “frozen in”, depending on synthesis history.•Photostimulation provides mechanism for carrier equilibration with band edges.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2015.09.106</identifier><language>eng</language><publisher>Netherlands: Elsevier B.V</publisher><subject>Anatase ; Carrier concentration ; Film thickness ; Frozen ; Grain boundaries ; Grain boundary engineering ; Majority carriers ; Occupation ; Photostimulation ; Semiconductors ; TiO2 ; Titanium dioxide</subject><ispartof>Materials letters, 2016-01, Vol.162 (C), p.20-23</ispartof><rights>2015 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c361t-31626cf1329268c24de877b58b2f0be508ed09f18ab88c91253b351654beb4d73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1359532$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sellers, Meredith C.K.</creatorcontrib><creatorcontrib>Seebauer, Edmund G.</creatorcontrib><title>Persistent illumination-induced changes in polycrystalline TiO2 majority carrier concentration</title><title>Materials letters</title><description>In polycrystalline semiconductors for which grain boundaries mediate a persistent change in majority carrier concentration on super-bandgap photostimulation, the change generally involves an increase. Capacitance–voltage measurements on thin-film polycrystalline anatase TiO2 demonstrate a photostimulated increase or decrease in majority carrier concentration, depending on film thickness. With the help of photoreflectance measurements, the results are interpreted in terms of deep-gap energy states that reside near grain boundaries, whose charge occupation is “frozen in,” depending on synthesis history. Photostimulation provides the mechanism by which these states equilibrate with the band edges. •Carrier concentration, PR spectra acquired for thin-film polycrystalline anatase.•TiO2 shows persistent photostimulated changes in majority carrier concentration.•Carrier concentration rises or falls depending on film thickness.•Occupation of deep-gap states is “frozen in”, depending on synthesis history.•Photostimulation provides mechanism for carrier equilibration with band edges.</description><subject>Anatase</subject><subject>Carrier concentration</subject><subject>Film thickness</subject><subject>Frozen</subject><subject>Grain boundaries</subject><subject>Grain boundary engineering</subject><subject>Majority carriers</subject><subject>Occupation</subject><subject>Photostimulation</subject><subject>Semiconductors</subject><subject>TiO2</subject><subject>Titanium dioxide</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kE1r3DAQhkVpodtt_0EPpqdcvNGHZUmXQAn5gkB6SCCnCFked7XI0lbSBvbfRxvn3NPA8MzLOw9CPwneEEz6891mNsVD2VBM-Aaruu0_oRWRgrWdEuozWlVMtFyI56_oW847jHGncLdCL38gZZcLhNI47w-zC6a4GFoXxoOFsbFbE_5Cblxo9tEfbTrmYrx3AZpH90Cb2exicuXYWJOSg9TYGGxNS-8x39GXyfgMPz7mGj1dXz1e3rb3Dzd3l7_vW8t6UlpGetrbiTCqaC8t7UaQQgxcDnTCA3AsYcRqItIMUlpFKGcD46Tn3QBDNwq2Rr-W3JiL09m6AnZbmwSwRRPGFWe0QmcLtE_x3wFy0bPLFrw3AeIhayKExFhQ0VW0W1CbYs4JJr1PbjbpqAnWJ-d6pxfn-uRcY1W3fT27WM6g_vpabZyqQPUxunRqMkb3_4A34hCNuw</recordid><startdate>20160101</startdate><enddate>20160101</enddate><creator>Sellers, Meredith C.K.</creator><creator>Seebauer, Edmund G.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>OTOTI</scope></search><sort><creationdate>20160101</creationdate><title>Persistent illumination-induced changes in polycrystalline TiO2 majority carrier concentration</title><author>Sellers, Meredith C.K. ; Seebauer, Edmund G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-31626cf1329268c24de877b58b2f0be508ed09f18ab88c91253b351654beb4d73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Anatase</topic><topic>Carrier concentration</topic><topic>Film thickness</topic><topic>Frozen</topic><topic>Grain boundaries</topic><topic>Grain boundary engineering</topic><topic>Majority carriers</topic><topic>Occupation</topic><topic>Photostimulation</topic><topic>Semiconductors</topic><topic>TiO2</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sellers, Meredith C.K.</creatorcontrib><creatorcontrib>Seebauer, Edmund G.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>OSTI.GOV</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sellers, Meredith C.K.</au><au>Seebauer, Edmund G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Persistent illumination-induced changes in polycrystalline TiO2 majority carrier concentration</atitle><jtitle>Materials letters</jtitle><date>2016-01-01</date><risdate>2016</risdate><volume>162</volume><issue>C</issue><spage>20</spage><epage>23</epage><pages>20-23</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>In polycrystalline semiconductors for which grain boundaries mediate a persistent change in majority carrier concentration on super-bandgap photostimulation, the change generally involves an increase. Capacitance–voltage measurements on thin-film polycrystalline anatase TiO2 demonstrate a photostimulated increase or decrease in majority carrier concentration, depending on film thickness. With the help of photoreflectance measurements, the results are interpreted in terms of deep-gap energy states that reside near grain boundaries, whose charge occupation is “frozen in,” depending on synthesis history. Photostimulation provides the mechanism by which these states equilibrate with the band edges. •Carrier concentration, PR spectra acquired for thin-film polycrystalline anatase.•TiO2 shows persistent photostimulated changes in majority carrier concentration.•Carrier concentration rises or falls depending on film thickness.•Occupation of deep-gap states is “frozen in”, depending on synthesis history.•Photostimulation provides mechanism for carrier equilibration with band edges.</abstract><cop>Netherlands</cop><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2015.09.106</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0167-577X
ispartof Materials letters, 2016-01, Vol.162 (C), p.20-23
issn 0167-577X
1873-4979
language eng
recordid cdi_osti_scitechconnect_1359532
source Elsevier
subjects Anatase
Carrier concentration
Film thickness
Frozen
Grain boundaries
Grain boundary engineering
Majority carriers
Occupation
Photostimulation
Semiconductors
TiO2
Titanium dioxide
title Persistent illumination-induced changes in polycrystalline TiO2 majority carrier concentration
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T08%3A40%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Persistent%20illumination-induced%20changes%20in%20polycrystalline%20TiO2%20majority%20carrier%20concentration&rft.jtitle=Materials%20letters&rft.au=Sellers,%20Meredith%20C.K.&rft.date=2016-01-01&rft.volume=162&rft.issue=C&rft.spage=20&rft.epage=23&rft.pages=20-23&rft.issn=0167-577X&rft.eissn=1873-4979&rft_id=info:doi/10.1016/j.matlet.2015.09.106&rft_dat=%3Cproquest_osti_%3E1778007274%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c361t-31626cf1329268c24de877b58b2f0be508ed09f18ab88c91253b351654beb4d73%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1778007274&rft_id=info:pmid/&rfr_iscdi=true