Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method

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Bibliographic Details
Published in:Journal of crystal growth 2014-12, Vol.407 (C)
Main Authors: Kivambe, Maulid, Powell, Douglas M., Castellanos, Sergio, Ann Jensen, Mallory, Morishige, Ashley E., Nakajima, Kazuo, Morishita, Kohei, Murai, Ryota, Buonassisi, Tonio
Format: Article
Language:English
Online Access:Get full text
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ISSN:0022-0248
1873-5002