Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core–shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling pr...

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Bibliographic Details
Published in:Nano letters 2017-02, Vol.17 (2), p.1049-1055
Main Authors: Li, Changyi, Wright, Jeremy B, Liu, Sheng, Lu, Ping, Figiel, Jeffrey J, Leung, Benjamin, Chow, Weng W, Brener, Igal, Koleske, Daniel D, Luk, Ting-Shan, Feezell, Daniel F, Brueck, S. R. J, Wang, George T
Format: Article
Language:English
Subjects:
core−shell
Gallium - chemistry
GaN
Indium - chemistry
InGaN
laser
Lasers
Light
MATERIALS SCIENCE
Nanocomposites - chemistry
NANOSCIENCE AND NANOTECHNOLOGY
Nanotechnology
nanowire
Nanowires - chemistry
Nitrogen - chemistry
nonpolar
Particle Size
Semiconductors
Structure-Activity Relationship
Surface Properties
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Summary:We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core–shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core–shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core–shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core–shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core–shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV–visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.6b04483