A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology

This paper presents a compact low-power 4 × 10 Gb/s quad-driver module for vertical-cavity surface-emitting laser (VCSEL) arrays in a 65-nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to four channels. To increase the bandwidth of the...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2017-06, Vol.64 (6), p.1599-1604
Main Authors: Zeng, Zhiyao, Sun, Kexu, Wang, Guanhua, Zhang, Tao, Kulis, Szymon, Gui, Ping, Moreira, Paulo
Format: Article
Language:English
Subjects:
Bandwidth
Bandwidths
Channels
CMOS
Crosstalk
High-speed data link
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Irradiation
Jitter
Laser arrays
laser driver array
Limiting
Modulation
Power consumption
POWER TRANSMISSION AND DISTRIBUTION
Switches
Technology
Vertical cavity surface emission lasers
Vertical cavity surface emitting lasers
vertical-cavity surface-emitting laser (VCSEL)
Vibration
Wire
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Summary:This paper presents a compact low-power 4 × 10 Gb/s quad-driver module for vertical-cavity surface-emitting laser (VCSEL) arrays in a 65-nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to four channels. To increase the bandwidth of the driver, an internal feed-forward path is added for pole-zero cancellation, without increasing the power consumption. An edge-configurable pre-emphasis technique is adopted to achieve high bandwidth and minimize the asymmetry of the fall and rise times of the driver output current. Measurement results demonstrate an rms jitter of 0.68 ps for 10 Gb/s operation. Tests demonstrate negligible crosstalk between channels. Under irradiation, the modulation amplitude degrades less than 5% up to 300-Mrad ionizing dose. The area of the quad-driver array is 500 μm by 1000 μm, and the total power consumption for the entire driver array chip is 130 mW for typical current setting.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2017.2702064