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Phase-field simulations of GaN/InGaN quantum dot growth by selective area epitaxy

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Bibliographic Details
Published in:Journal of crystal growth 2012-12, Vol.361 (C)
Main Authors: Aagesen, L. K., Lee, L. K., Ku, P. -C., Thornton, K.
Format: Article
Language:English
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ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2012.08.042