Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy: Origin of broad luminescence from site-controlled InGaN nanodots

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2014-01, Vol.211 (3)
Main Authors: Lee, L. K., Aagesen, L. K., Thornton, K., Ku, P. -C.
Format: Article
Language:English
Subjects:
solar (photovoltaic), solar (thermal), phonons, thermal conductivity, thermoelectric, electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly)
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ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201330362