Signal formation in irradiated silicon detectors

In this paper we present an initial study on the effects induced by radiation on the signal generated by a minimum ionising particle in silicon detector. The results are obtained by implementing in the simulation programme Weightfield2 (WF2) charge carrier trapping and non linear distribution of the...

Full description

Saved in:
Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2017-02, Vol.845 (C), p.20-23
Main Authors: Baldassarri, B., Cartiglia, N., Cenna, F., Sadrozinski, H., Seiden, A.
Format: Article
Language:English
Subjects:
Double junction
Silicon sensors
Simulation
Trapping
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper we present an initial study on the effects induced by radiation on the signal generated by a minimum ionising particle in silicon detector. The results are obtained by implementing in the simulation programme Weightfield2 (WF2) charge carrier trapping and non linear distribution of the electric field. Results of sample simulations are presented, along with a discussion of the limitations of the current approach and ideas for future improvements. •The effects of charge trapping and quadratic electric field have been implemented in Weightfield2.•Simulation results show drastic trapping reduction in thin sensors and suggest survival of timing efficiency in LGADs.•Changes in mobility and charge multiplication effects have yet to be addressed.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2016.06.010