Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE

• Published in: Journal of crystal growth 2016-01, Vol.434 (C), p.47-54
• Main Authors: Torelly, G., Jakomin, R., Pinto, L.D., Pires, M.P., Ruiz, J., Caldas, P.G., Prioli, R., Xie, H., Ponce, F.A., Souza, P.L.
• Format: Article
• Language: English
• Subjects: A.1 Nanostructures; A.3 Metalorganic vapor phase epitaxy; B.1 Arsenates; B.2 Semiconducting III–V materials; Deposition; Gallium arsenide; Indium arsenides; Nucleation; Quantum dots; Terraces; Three dimensional; Two dimensional
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2015.10.031

An investigation of ultra-thin InAs layers deposited on GaAs is carried out combining theoretical calculations with results of high-resolution transmission electron microscopy, atomic force microscopy and photoluminescence. Five period InAs/GaAs epilayers were grown by metalorganic vapor phase epitaxy at a very low growth rate, with different InAs deposition times, in order to investigate the morphological and optical evolution from extended 2D InAs flat areas of various thicknesses, starting at 1 monolayer, to the nucleation of 3D InAs islands. The coexistence of extended monolayer-flat 2D terraces of different thicknesses and 3D islands is demonstrated. Optically active InAs 2D terraces with a thickness beyond the critical value are detected. For longer deposition times, quantum dots are nucleated and their size increases at the expense of the 3 monolayer thick 2D layers. •Transition from a 2D to a 3D MOVPE growth mode for InAs on GaAs is investigated.•AFM, TEM, RAS and PL results are evaluated together with theoretical calculations.•Coexistence of ML flat 2D terraces of ≠ thicknesses and 3D islands is observed.•PL spectra of ultra thin InAs layers show narrow peaks at four specific energies.•PL emission of InAs layers with a thickness beyond the critical value is detected.