Total Ionizing Dose Effects on Ge Channel $p$ FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain

• Published in: IEEE transactions on nuclear science 2015-12, Vol.62 (6), p.2412-2416
• Main Authors: Wang, Liang, Zhang, En Xia, Schrimpf, Ronald D., Fleetwood, Daniel M., Duan, Guo Xing, Hachtel, Jordan A., Zhang, Cher Xuan, Reed, Robert A., Samsel, Isaak K., Alles, Michael L., Witters, Liesbeth, Collaert, Nadine, Linten, Dimitri, Mitard, Jerome, Chisholm, Matthew F., Pantelides, Sokrates T., Galloway, Kenneth F.
• Format: Article
• Language: English
• Subjects: Ge pFET; negative bias temperature instability (NBTI); NUCLEAR PHYSICS AND RADIATION PHYSICS; radiation-induced leakage; threshold-voltage shift; total ionizing dose (TID); transconductance degradation
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2015.2489019

Here, the total ionizing dose response of Ge channel pFETs with raised Si0.55Ge0.45 source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.