Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air

A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te‐terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is ach...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-08, Vol.28 (30), p.6465-6470
Main Authors: Fonseca, Jose J., Tongay, Sefaattin, Topsakal, Mehmet, Chew, Annabel R., Lin, Alan J., Ko, Changhyun, Luce, Alexander V., Salleo, Alberto, Wu, Junqiao, Dubon, Oscar D.
Format: Article
Language:English
Subjects:
Accessibility
band structure modification
Chemisorption
Company structure
Energy gaps (solid state)
Gallium
gallium telluride
Gates
layered semiconductors
oxygen chemisorption
Semiconductors
Surface chemistry
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Summary:A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te‐terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201601151