Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air

A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te‐terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is ach...

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Published in:Advanced materials (Weinheim) 2016-08, Vol.28 (30), p.6465-6470
Main Authors: Fonseca, Jose J., Tongay, Sefaattin, Topsakal, Mehmet, Chew, Annabel R., Lin, Alan J., Ko, Changhyun, Luce, Alexander V., Salleo, Alberto, Wu, Junqiao, Dubon, Oscar D.
Format: Article
Language:English
Subjects:
Accessibility
band structure modification
Chemisorption
Company structure
Energy gaps (solid state)
Gallium
gallium telluride
Gates
layered semiconductors
oxygen chemisorption
Semiconductors
Surface chemistry
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cited_by cdi_FETCH-LOGICAL-c6491-5ce1ce18f158f5326fff65f893c08a386fcab34a99c5957236e781a163c03acf3
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container_end_page 6470
container_issue 30
container_start_page 6465
container_title Advanced materials (Weinheim)
container_volume 28
creator Fonseca, Jose J.
Tongay, Sefaattin
Topsakal, Mehmet
Chew, Annabel R.
Lin, Alan J.
Ko, Changhyun
Luce, Alexander V.
Salleo, Alberto
Wu, Junqiao
Dubon, Oscar D.
description A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te‐terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.
doi_str_mv 10.1002/adma.201601151
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source Wiley-Blackwell Read & Publish Collection
subjects Accessibility
band structure modification
Chemisorption
Company structure
Energy gaps (solid state)
Gallium
gallium telluride
Gates
layered semiconductors
oxygen chemisorption
Semiconductors
Surface chemistry
title Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air
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