Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films

The evolution of the quantum anomalous Hall effect with the thickness of Cr‐doped (Bi,Sb)2Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band‐bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-08, Vol.28 (30), p.6386-6390
Main Authors: Feng, Xiao, Feng, Yang, Wang, Jing, Ou, Yunbo, Hao, Zhenqi, Liu, Chang, Zhang, Zuocheng, Zhang, Liguo, Lin, Chaojing, Liao, Jian, Li, Yongqing, Wang, Li-Li, Ji, Shuai-Hua, Chen, Xi, Ma, Xucun, Zhang, Shou-Cheng, Wang, Yayu, He, Ke, Xue, Qi-Kun
Format: Article
Language:English
Subjects:
Evolution
Exchange
Ferromagnetic materials
Ferromagnetism
Hall effect
Homogeneity
Insulators
magnetic topological insulators
quantum anomalous Hall effect
thickness dependence
thin films
Topology
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Summary:The evolution of the quantum anomalous Hall effect with the thickness of Cr‐doped (Bi,Sb)2Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band‐bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high‐temperature quantum anomalous Hall material.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201600919