Formation of nickel germanides from Ni layers with thickness below 10 nm

The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex sit...

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Bibliographic Details
Published in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2017-03, Vol.35 (2)
Main Authors: Jablonka, Lukas, Kubart, Tomas, Primetzhofer, Daniel, Abedin, Ahmad, Hellström, Per-Erik, Östling, Mikael, Jordan-Sweet, Jean, Lavoie, Christian, Zhang, Shi-Li, Zhang, Zhen
Format: Article
Language:English
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MATERIALS SCIENCE
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Summary:The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3Ni5Ge3 to NiGe was found to be nucleation-controlled for Ni thicknesses
ISSN:2166-2746
2166-2754
DOI:10.1116/1.4975152