Radiative and interfacial recombination in CdTe heterostructures

Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and...

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Published in:Applied physics letters 2014-12, Vol.105 (22)
Main Authors: Swartz, C. H., Edirisooriya, M., LeBlanc, E. G., Noriega, O. C., Jayathilaka, P. A. R. D., Ogedengbe, O. S., Hancock, B. L., Holtz, M., Myers, T. H., Zaunbrecher, K. N.
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Language:English
Subjects:
Applied physics
Cadmium tellurides
Dependence
Film growth
Heterostructures
Photoluminescence
Radiative recombination
Recombination coefficient
Substrates
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cited_by cdi_FETCH-LOGICAL-c385t-dfe00aacdcac467e4f694ff2e1d483d56148ac511fe64d26a0830024c2b6bed33
cites cdi_FETCH-LOGICAL-c385t-dfe00aacdcac467e4f694ff2e1d483d56148ac511fe64d26a0830024c2b6bed33
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container_issue 22
container_start_page
container_title Applied physics letters
container_volume 105
creator Swartz, C. H.
Edirisooriya, M.
LeBlanc, E. G.
Noriega, O. C.
Jayathilaka, P. A. R. D.
Ogedengbe, O. S.
Hancock, B. L.
Holtz, M.
Myers, T. H.
Zaunbrecher, K. N.
description Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 1010 cm−2 and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10−10 cm3s−1. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.
doi_str_mv 10.1063/1.4902926
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP - American Institute of Physics
subjects Applied physics
Cadmium tellurides
Dependence
Film growth
Heterostructures
Photoluminescence
Radiative recombination
Recombination coefficient
Substrates
title Radiative and interfacial recombination in CdTe heterostructures
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