Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport

A photoluminesence (PL) study of the radiative recombination mechanisms for CdTe films deposited under different Cd and Te overpressure by elemental vapor transport is presented. The experiment and analysis have been carried out in the temperature range of 12–130K. The intensity of the PL laser exci...

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Bibliographic Details
Published in:Thin solid films 2015-05, Vol.582 (C), p.139-145
Main Authors: Collins, Shamara, Vatavu, Sergiu, Evani, Vamsi, Khan, Md, Bakhshi, Sara, Palekis, Vasilios, Rotaru, Corneliu, Ferekides, Chris
Format: Article
Language:English
Subjects:
Bands
Cadmium telluride
Cadmium tellurides
Defects
Deposition
Elemental vapor transport
Laser beams
Overpressure
Photoluminescence
Radiative recombination
Thin films
Transport
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Summary:A photoluminesence (PL) study of the radiative recombination mechanisms for CdTe films deposited under different Cd and Te overpressure by elemental vapor transport is presented. The experiment and analysis have been carried out in the temperature range of 12–130K. The intensity of the PL laser excitation beam was varied by two orders of magnitude. It has been established that the bands in the 1.47–1.50eV are determined by transitions involving shallow D and A states and the 1.36x–1.37xeV band is due to band to level transitions. Deep transitions at 1.042eV and 1.129eV are due to radiative transitions to levels determined by CdTe native defects. •Photoluminescense (PL) of CdTe thin films is present in the 0.8–1.6eV spectral region.•High intensity excitonic peaks are among the main radiative paths.•Radiative transitions at 1.36x eV are assisted by dislocations caused levels.•Extremal Cd/Te overpressure ratios enhance PL for 1.497eV, 1.486eV, 1.474eV bands.•PL intensity reaches its max value for the 0.45 and 1.25 Cd/Te overpressure ratios.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2014.11.088