Frequency dependent polarisation switching in h-ErMnO3

We report an electric-field poling study of the geometrically-driven improper ferroelectric h-ErMnO3. From a detailed dielectric analysis, we deduce the temperature and the frequency dependent range for which single-crystalline h-ErMnO3 exhibits purely intrinsic dielectric behaviour, i.e., free from...

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Bibliographic Details
Published in:Applied physics letters 2018-04, Vol.112 (18)
Main Authors: Ruff, Alexander, Li, Ziyu, Loidl, Alois, Schaab, Jakob, Fiebig, Manfred, Cano, Andres, Yan, Zewu, Bourret, Edith, Glaum, Julia, Meier, Dennis, Krohns, Stephan
Format: Article
Language:English
Subjects:
dielectrics
ferroelectric materials
magnetic materials
MATERIALS SCIENCE
microscopy
multiferroics
semiconductors
spectroscopy
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Summary:We report an electric-field poling study of the geometrically-driven improper ferroelectric h-ErMnO3. From a detailed dielectric analysis, we deduce the temperature and the frequency dependent range for which single-crystalline h-ErMnO3 exhibits purely intrinsic dielectric behaviour, i.e., free from the extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers. In this regime, ferroelectric hysteresis loops as a function of frequency, temperature, and applied electric fields are measured, revealing the theoretically predicted saturation polarisation on the order of 5–6 μC/cm2. Special emphasis is put on frequency dependent polarisation switching, which is explained in terms of domain-wall movement similar to proper ferroelectrics. Controlling the domain walls via electric fields brings us an important step closer to their utilization in domain-wall-based electronics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5026732