Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth

We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM), based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and wafer-scale fabrication, oxide-bonded at 200C to a lithium niobate (LN) thin film. Our design integrates silicon photonics li...

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Bibliographic Details
Published in:Optics express 2018-09, Vol.26 (18), p.23728-23739
Main Authors: Weigel, Peter O, Zhao, Jie, Fang, Kelvin, Al-Rubaye, Hasan, Trotter, Douglas, Hood, Dana, Mudrick, John, Dallo, Christina, Pomerene, Andrew T, Starbuck, Andrew L, DeRose, Christopher T, Lentine, Anthony L, Rebeiz, Gabriel, Mookherjea, Shayan
Format: Article
Language:English
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Summary:We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM), based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and wafer-scale fabrication, oxide-bonded at 200C to a lithium niobate (LN) thin film. Our design integrates silicon photonics light input/output and optical components, such as directional couplers and low-radius bends. No etching or patterning of the thin film LN is required. This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator.
ISSN:1094-4087
1094-4087
DOI:10.1364/oe.26.023728