A color x-ray camera for 2–6 keV using a mass produced back illuminated complementary metal oxide semiconductor sensor

There are several reports in the scientific literature of the use of mass-produced charge coupled device or complementary metal oxide semiconductor (CMOS) sensors as x-ray detectors that combine high spatial resolution with significant energy resolution. Exploiting a relatively new especially favora...

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Bibliographic Details
Published in:Review of scientific instruments 2018-09, Vol.89 (9), p.093111-093111
Main Authors: Holden, William M., Hoidn, Oliver R., Seidler, Gerald T., DiChiara, Anthony D.
Format: Article
Language:English
Subjects:
Charge coupled devices
CMOS
Damage assessment
Digital cameras
Energy resolution
Free electron lasers
Laser plasmas
Light sources
Metal oxide semiconductors
Metal oxides
Photons
Plasma physics
Scientific apparatus & instruments
Sensors
Spatial resolution
X ray detectors
X ray sources
X ray spectrometers
X-ray fluorescence
X-ray spectroscopy
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Summary:There are several reports in the scientific literature of the use of mass-produced charge coupled device or complementary metal oxide semiconductor (CMOS) sensors as x-ray detectors that combine high spatial resolution with significant energy resolution. Exploiting a relatively new especially favorable ambient-temperature back-illuminated CMOS sensor, we report the development of a spectroscopic x-ray camera having particularly impressive performance for 2–6 keV photons. This instrument has several beneficial characteristics for advanced x-ray spectroscopy studies in the laboratory, at synchrotron light sources, at x-ray free electron lasers, or when using pulsed x-ray sources such as for laser plasma physics research. These characteristics include fine position and energy resolution for individual photon events, high saturation rates, frame rates above 100 Hz, easy user maintenance for damaged sensors, and software for real-time processing. We evaluate this camera as an alternative to traditional energy-dispersive solid-state detectors, such as silicon drift detectors, and also illustrate its use in a very high resolution wavelength-dispersive x-ray fluorescence spectrometer (i.e., x-ray emission spectrometer) that has recently been reported elsewhere [W. M. Holden et al., Rev. Sci. Instrum. 88(7), 073904 (2017)].
ISSN:0034-6748
1089-7623
DOI:10.1063/1.5047934