Crystallization in the Fractional Quantum Hall Regime Induced by Landau-Level Mixing

The interplay between strongly correlated liquid and crystal phases for two-dimensional electrons exposed to a high transverse magnetic field is of fundamental interest. Through the nonperturbative fixed-phase diffusion Monte Carlo method, we determine the phase diagram of the Wigner crystal in the...

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Bibliographic Details
Published in:Physical review letters 2018-09, Vol.121 (11), p.116802-116802, Article 116802
Main Authors: Zhao, Jianyun, Zhang, Yuhe, Jain, J K
Format: Article
Language:English
Subjects:
Arsenides
composite fermions
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Crystallization
Crystals
Dependence
Fermions
fractional quantum Hall effect
Gallium arsenide
Landau level mixing
Monte Carlo simulation
Phase diagrams
Quantum wells
Wigner crystal
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Summary:The interplay between strongly correlated liquid and crystal phases for two-dimensional electrons exposed to a high transverse magnetic field is of fundamental interest. Through the nonperturbative fixed-phase diffusion Monte Carlo method, we determine the phase diagram of the Wigner crystal in the ν-κ plane, where ν is the filling factor and κ is the strength of Landau-level (LL) mixing. The phase boundary is seen to exhibit a striking ν dependence, with the states away from the magic filling factors ν=n/(2pn+1) being much more susceptible to crystallization due to Landau-level mixing than those at ν=n/(2pn+1). Our results explain the qualitative difference between the experimental behaviors observed in n- and p-doped gallium arsenide quantum wells and, in particular, the existence of an insulating state for ν
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.121.116802