Novel high-energy ion implantation facility using a 15 MV Tandem Van de Graaff accelerator

The implantation depths required for the development and fabrication of future generations of silicon carbide (SiC) semiconductor devices require ion energies that are well above the capabilities of most conventional ion implanters. To generate implantation profiles that extend from more than 10 μm...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2019-03, Vol.442 (C), p.36-40
Main Authors: Thieberger, P., Carlson, C., Steski, D., Ghandi, R., Bolotnikov, A., Lilienfeld, D., Losee, P.
Format: Article
Language:English
Subjects:
Ion implantation
PARTICLE ACCELERATORS
Silicon carbide
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Summary:The implantation depths required for the development and fabrication of future generations of silicon carbide (SiC) semiconductor devices require ion energies that are well above the capabilities of most conventional ion implanters. To generate implantation profiles that extend from more than 10 μm to the surface of the wafer, a wide range of energy ions (kV to 10 s of MeV) is required. We developed a novel multi-energy implantation system that satisfies these requirements using heavy ion beams from one of the Brookhaven National Laboratory’s two 15 MV Tandem Van de Graaff accelerators. This system is described, including the dosimetry approach and the available ion species and intensities. Finally, an example of a measured implantation profiles in SiC is shown and compared to simulations.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2019.01.016