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Band offsets for the epitaxial TiO2/SrTiO3/Si(001) system

We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO2 (anatase)/SrTiO3/Si(001) system. The valence band offsets are −2.1±0.1 eV and +0.2±0.1 eV at the SrTiO3/Si and TiO2/SrTiO3 heterojunctions, r...

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Bibliographic Details
Published in:Applied physics letters 2003-11, Vol.83 (18), p.3734-3736
Main Authors: Tuan, A. C., Kaspar, T. C., Droubay, T., Rogers, J. W., Chambers, S. A.
Format: Article
Language:English
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Summary:We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO2 (anatase)/SrTiO3/Si(001) system. The valence band offsets are −2.1±0.1 eV and +0.2±0.1 eV at the SrTiO3/Si and TiO2/SrTiO3 heterojunctions, respectively. Assuming bulk band gaps for the SrTiO3 and TiO2 epitaxial films, the associated conduction band offsets are +0.1±0.1 eV and +0.1±0.1 eV. Si at the interface is in a flatband state, indicating a very low density of electronic states. These results suggest that spin-polarized electron injection from ferromagnetic Co-doped TiO2 anatase into Si should be facile.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1625113