Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures

We report a gate-tunable dimensional crossover in sub-micrometer-scale channels created at the LaAlO3/SrTiO3 interface. Conducting channels of widths 10 nm and 200 nm are created using conducting atomic force microscope lithography. Under sufficient negative back-gate tuning, the orbital magnetocond...

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Bibliographic Details
Published in:APL materials 2017-10, Vol.5 (10), p.106107-106107-7
Main Authors: Tomczyk, Michelle, Zhou, Rongpu, Lee, Hyungwoo, Lee, Jung-Woo, Cheng, Guanglei, Huang, Mengchen, Irvin, Patrick, Eom, Chang-Beom, Levy, Jeremy
Format: Article
Language:English
Subjects:
conductance quantum
electromagnetism
electrostatics
ferroelasticity
heterostructures
MATERIALS SCIENCE
oxides
spin-orbit interactions
superconductivity
thermodynamic states and processes
transition metals
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Summary:We report a gate-tunable dimensional crossover in sub-micrometer-scale channels created at the LaAlO3/SrTiO3 interface. Conducting channels of widths 10 nm and 200 nm are created using conducting atomic force microscope lithography. Under sufficient negative back-gate tuning, the orbital magnetoconductance of the 200 nm channel is strongly quenched, and residual signatures of low-field weak-antilocalization become strikingly similar to that of the 10 nm channel. The dimensional crossover for the 200 nm channel takes place near the conductance quantum G = 2e 2/h. The ability to tune the dimensionality of narrow LaAlO3/SrTiO3 channels has implications for interpreting transport in a variety of gate-tunable oxide-heterostructure devices.
ISSN:2166-532X
2166-532X
DOI:10.1063/1.4999804