Comparative thickness measurements of SiO2/Si films for thicknesses less than 10 nm

We report on a comparative measurement of SiO2/Si dielectric film thickness (t < 10 nm) using grazing‐incidence x‐ray photoelectron spectroscopy, neutron reflectometry and spectroscopic ellipsometry. Samples with nominal thicknesses of 3–7 nm were characterized by XPS with grazing‐incidence x‐ray...

Full description

Saved in:
Bibliographic Details
Published in:Surface and interface analysis 2004-01, Vol.36 (1), p.23-29
Main Authors: Jach, T., Dura, J. A., Nguyen, N. V., Swider, J., Cappello, G., Richter, C.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
ellipsometry
Exact sciences and technology
GIXPS
INTERLABORATORY COMPARISONS
MATERIALS SCIENCE
NATIONAL SYNCHROTRON LIGHT SOURCE
neutron reflectrometry
Physics
SILICON
SILICON OXIDES
SiO2
THICKNESS
XPS
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report on a comparative measurement of SiO2/Si dielectric film thickness (t < 10 nm) using grazing‐incidence x‐ray photoelectron spectroscopy, neutron reflectometry and spectroscopic ellipsometry. Samples with nominal thicknesses of 3–7 nm were characterized by XPS with grazing‐incidence x‐rays at 1.8 keV, by cold neutron reflectometry (λ = 0.475 nm) and by spectroscopic ellipsometry over 1.5 eV < E < 6.0 eV. The results show good agreement between the ellipsometry and grazing‐incidence XPS, with slightly lower values for the neutron reflectometry. The role of surface contamination in each type of measurement is discussed. Published in 2004 by John Wiley & Sons, Ltd.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.1641