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Growth of Cr-doped TiO2 films in the rutile and anatase structures by oxygen plasma assisted molecular beam epitaxy

As part of a search for new spintronic materials, highly ordered films of CrxTi1--xO2 in both the rutile and anatase structures and for several Cr concentrations ranging from x=0*02 to 0*16 were grown by oxygen plasma assisted molecular beam epitaxy. X--ray photoelectron diffraction data of the Cr 2...

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Bibliographic Details
Published in:Thin solid films 2005-07, Vol.484 (1-2), p.289-298
Main Authors: OSTERWALDER, J, DROUBAY, T, KASPAR, T, WILLIAMS, J, WANG, C. M, CHAMBERS, S. A
Format: Article
Language:English
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Summary:As part of a search for new spintronic materials, highly ordered films of CrxTi1--xO2 in both the rutile and anatase structures and for several Cr concentrations ranging from x=0*02 to 0*16 were grown by oxygen plasma assisted molecular beam epitaxy. X--ray photoelectron diffraction data of the Cr 2p level exhibit the same patterns and the same modulation amplitudes as those observed for Ti 2p, providing a strong indication that a large fraction of the Cr atoms occupy substitutional lattice sites in both structures. The Cr 2p core--level spectra as well as a Cr 3d related dopant signal above the valence band of TiO2 are characteristic of Cr(3)(+)ions. At room temperature, Cr--doped anatase films exhibit ferromagnetic order with a saturation magnetization of ~0*6 muB per Cr atom and strong in--plane anisotropy.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.02.028