Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device

We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called cha...

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Bibliographic Details
Published in:Physical review. X 2019-04, Vol.9 (2), Article 021011
Main Authors: Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S., Vandersypen, L. M. K.
Format: Article
Language:English
Subjects:
Accuracy
Benchmarks
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Condensed Matter & Materials Physics
Crosstalk
Decay
Double quantum dots
Electron spin resonance
Fault tolerance
Gates
Physical Systems
Physics
PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Quantum benchmarking
Quantum computing
Quantum gates
Quantum Information
Quantum information with solid state qubits
Qubits (quantum computing)
Silicon
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Summary:We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system, here giving a 92% fidelity estimate for the controlled-Zgate. Interestingly, with character randomized benchmarking, the two-qubit gate fidelity can be obtained by studying the additional decay induced by interleaving the two-qubit gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.
ISSN:2160-3308
2160-3308
DOI:10.1103/PhysRevX.9.021011