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From an atomic layer to the bulk: Low-temperature atomistic structure and ferroelectric and electronic properties of SnTe films
SnTe hosts ferroelectricity that competes with its weak nontrivial band topology: in the high-symmetry rocksalt structure-in which its intrinsic electric dipole is quenched-this material develops metallic surface bands, but in its rhombic ground-state configuration-which hosts a nonzero spontaneous...
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Published in: | Physical review. B 2019-04, Vol.99 (13), p.134108, Article 134108 |
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container_issue | 13 |
container_start_page | 134108 |
container_title | Physical review. B |
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creator | Kaloni, Thaneshwor P. Chang, Kai Miller, Brandon J. Xue, Qi-Kun Chen, Xi Ji, Shuai-Hua Parkin, Stuart S. P. Barraza-Lopez, Salvador |
description | SnTe hosts ferroelectricity that competes with its weak nontrivial band topology: in the high-symmetry rocksalt structure-in which its intrinsic electric dipole is quenched-this material develops metallic surface bands, but in its rhombic ground-state configuration-which hosts a nonzero spontaneous electric dipole-the crystalline symmetry is lowered, and the presence of surface electronic bands is not guaranteed. Here, the type of ferroelectric coupling and the atomistic and electronic structure of SnTe films ranging from 2 to 40 atomic layers (ALs) are examined on freestanding samples, to which atomic layers were gradually added. Four-AL SnTe films are antiferroelectrically coupled, while thicker freestanding SnTe films are ferroelectrically coupled. The electronic band gap reduces its magnitude in going from 2 to 40 ALs, but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk. |
doi_str_mv | 10.1103/PhysRevB.99.134108 |
format | article |
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Four-AL SnTe films are antiferroelectrically coupled, while thicker freestanding SnTe films are ferroelectrically coupled. The electronic band gap reduces its magnitude in going from 2 to 40 ALs, but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk.</description><identifier>ISSN: 2469-9950</identifier><identifier>EISSN: 2469-9969</identifier><identifier>DOI: 10.1103/PhysRevB.99.134108</identifier><language>eng</language><publisher>College Park: American Physical Society</publisher><subject>Antiferroelectricity ; Electric bridges ; Electric dipoles ; Electronic properties ; Electronic structure ; Ferroelectric materials ; Ferroelectricity ; Low temperature ; MATERIALS SCIENCE ; Spin-orbit coupling ; Structural properties ; Symmetry ; Topology</subject><ispartof>Physical review. 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Four-AL SnTe films are antiferroelectrically coupled, while thicker freestanding SnTe films are ferroelectrically coupled. The electronic band gap reduces its magnitude in going from 2 to 40 ALs, but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk.</description><subject>Antiferroelectricity</subject><subject>Electric bridges</subject><subject>Electric dipoles</subject><subject>Electronic properties</subject><subject>Electronic structure</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Low temperature</subject><subject>MATERIALS SCIENCE</subject><subject>Spin-orbit coupling</subject><subject>Structural properties</subject><subject>Symmetry</subject><subject>Topology</subject><issn>2469-9950</issn><issn>2469-9969</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNo9kV9LwzAUxYsoOOa-gE9Bnzvzr2nimw6nwkDR-Rza9JZ1ts1MUmVPfnUzqj7de-79cThwkuSc4DkhmF09b_b-BT5v50rNCeMEy6NkQrlQqVJCHf_vGT5NZt5vMcZEYJVjNUm-l852qOhREWzXGNQWe3AoWBQ2gMqhfb9GK_uVBuh24IowOBhJHyLsgxvMeOsrVINzFlowwcXf4TIK20e5czYahAY8sjV67deA6qbt_FlyUheth9nvnCZvy7v14iFdPd0_Lm5WqeGEhpQKKmRcZWkYZHVtaJVTXOWE5mBULoSQlBesMoJIyUuZgRA0KyVkihkAyqbJxehrY3LtTRPAbIzt-5hQkwxLRnGELkcopv0YwAe9tYPrYy5NKeWMUyJ5pOhIGWe9d1DrnWu6wu01wfpQiP4rRCulx0LYD4F0gR0</recordid><startdate>20190423</startdate><enddate>20190423</enddate><creator>Kaloni, Thaneshwor P.</creator><creator>Chang, Kai</creator><creator>Miller, Brandon J.</creator><creator>Xue, Qi-Kun</creator><creator>Chen, Xi</creator><creator>Ji, Shuai-Hua</creator><creator>Parkin, Stuart S. 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P.</creatorcontrib><creatorcontrib>Barraza-Lopez, Salvador</creatorcontrib><creatorcontrib>Univ. of Arkansas, Fayetteville, AR (United States)</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>Physical review. B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kaloni, Thaneshwor P.</au><au>Chang, Kai</au><au>Miller, Brandon J.</au><au>Xue, Qi-Kun</au><au>Chen, Xi</au><au>Ji, Shuai-Hua</au><au>Parkin, Stuart S. 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subjects | Antiferroelectricity Electric bridges Electric dipoles Electronic properties Electronic structure Ferroelectric materials Ferroelectricity Low temperature MATERIALS SCIENCE Spin-orbit coupling Structural properties Symmetry Topology |
title | From an atomic layer to the bulk: Low-temperature atomistic structure and ferroelectric and electronic properties of SnTe films |
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