Approach to Defect-Free Lifetime and High Electron Density in CdTe

Achieving simultaneously high carrier density and lifetime is important for II–VI semiconductor-based applications such as photovoltaics and infrared detectors; however, it is a challenging task. In this work, high purity CdTe single crystals doped with indium (In) were grown by vertical Bridgman me...

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Bibliographic Details
Published in:Journal of electronic materials 2019-07, Vol.48 (7), p.4235-4239
Main Authors: Swain, S. K., Duenow, J. N., Johnston, S. W., Amarasinghe, M., McCoy, J. J., Metzger, W. K., Lynn, K. G.
Format: Article
Language:English
Subjects:
Bridgman method
Carrier density
Characterization and Evaluation of Materials
Chemistry and Materials Science
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Crystal growth
Electron density
Electronics and Microelectronics
Infrared detectors
Instrumentation
life time
MATERIALS SCIENCE
n-type CdTe
Optical and Electronic Materials
Photoluminescence
Photovoltaic cells
Radiative recombination
Single crystals
Solar cells
SOLAR ENERGY
Solid State Physics
Stoichiometry
time resolved photoluminescence
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Summary:Achieving simultaneously high carrier density and lifetime is important for II–VI semiconductor-based applications such as photovoltaics and infrared detectors; however, it is a challenging task. In this work, high purity CdTe single crystals doped with indium (In) were grown by vertical Bridgman melt growth under carefully controlled stoichiometry. Two-photon excitation time-resolved photoluminescence was employed to measure bulk recombination lifetime by eliminating surface recombination effects. By adjusting stoichiometry with post growth annealing, high-net free carrier density approaching 10 18  cm −3 was achieved simultaneously with lifetime approaching the radiative limit by suppressing non-radiative recombination centers.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-019-07190-x