Charge collection in irradiated HV-CMOS detectors

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2019-04, Vol.924 (C), p.214-218
• Main Authors: Hiti, B., Affolder, A., Arndt, K., Bates, R., Benoit, M., Bello, F. Di, Blue, A., Bortoletto, D., Buckland, M., Buttar, C., Caragiulo, P., Das, D., Doering, D., Dopke, J., Dragone, A., Ehrler, F., Fadeyev, V., Fedorko, W., Galloway, Z., Gay, C., Grabas, H., Gregor, I.M., Grenier, P., Grillo, A., Han, Y., Hoeferkamp, M., Hommels, L.B.A., Huffman, T., John, J., Kanisauskas, K., Kenney, C., Kramberger, G., Liang, Z., Mandić, I., Maneuski, D., Martinez-Mckinney, F., McMahon, S., Meng, L., Mikuž, M., Muenstermann, D., Nickerson, R., Peric, I., Phillips, P., Plackett, R., Rubbo, F., Ruckman, L., Segal, J., Seidel, S., Seiden, A., Shipsey, I., Song, W., Stanitzki, M., Su, D., Tamma, C., Turchetta, R., Vigani, L., Volk, J., Wang, R., Warren, M., Wilson, F., Worm, S., Xiu, Q., Zhang, J., Zhu, H.
• Format: Article
• Language: English
• Subjects: Active silicon detectors; Charge collection efficiency; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; LHC upgrade
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/j.nima.2018.07.022

Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ωcm were irradiated with neutrons and protons up to a fluence of 2×1015neqcm−2 and 3.6×1015neqcm−2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT and minimum ionising electrons from 90Sr. Results were used to assess radiation hardness of the detector in the given fluence range and to determine parameters of initial acceptor removal in different substrates. •Irradiated samples of different initial resistivity between 20 and a few 1000 Ω cm.•Characterisation with edge transient current technique and 90Sr beta electrons.•Sensitive region increases after irradiation due to acceptor removal.•Parameters of acceptor removal estimated for neutron irradiation.•After proton irradiation larger sensitive region than after neutron irradiation.