Radiation defect dynamics in 3C-, 4H-, and 6H-SiC studied by pulsed ion beams

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2018-11, Vol.435 (C), p.8-11
• Main Authors: Bayu Aji, L.B., Wallace, J.B., Kucheyev, S.O.
• Format: Article
• Language: English
• Subjects: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2018.03.026

Radiation damage behavior of SiC depends on its lattice structure. Here, we use a pulsed-ion-beam method to study defect interaction dynamics in 6H-SiC and damage buildup in 4H- and 6H-SiC irradiated at 100 °C with 500 keV Ar ions. These results are compared with previously reported data for Ar-ion-irradiated 3C- and 4H-SiC. We find that, for these irradiation conditions, damage buildup in 3C- and 6H-SiC is statistically indistinguishable and is significantly more efficient than in 4H-SiC. Within a stimulated amorphization model, 4H-SiC is described by a reduced amorphization cross-section constant, while the point defect cluster production cross-section is the same (within experimental errors) for the three polytypes studied. Moreover, 4H-SiC exhibits slower defect relaxation dynamics than 3C- and 6H-SiC. These results clearly demonstrate the importance of the lattice structure in damage buildup and defect interaction dynamics in SiC.