Probing Bilayer Grain Boundaries in Large‐Area Graphene with Tip‐Enhanced Raman Spectroscopy

The bilayer grain boundaries (GBs) in chemical‐vapor‐deposition‐grown large‐area graphene are identified using multispectral tip‐enhanced Raman imaging with 18 nm spatial resolution. The misorientation angle of the bilayer GBs is determined from a quantitative analysis of the phonon‐scattering prope...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2017-02, Vol.29 (7), p.np-n/a
Main Authors: Park, Kyoung‐Duck, Raschke, Markus B., Atkin, Joanna M., Lee, Young Hee, Jeong, Mun Seok
Format: Article
Language:English
Subjects:
bilayer graphene
Bilayers
Chemical vapor deposition
Chemistry
Electronic structure
Grain boundaries
Graphene
hybridization
Imaging
Materials Science
Misalignment
Misorientation
Physics
Quantitative analysis
Raman spectroscopy
Scattering
Science & Technology - Other Topics
sp3
Spatial resolution
stacking angles
tip‐enhanced Raman spectroscopy (TERS)
wrinkles
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Summary:The bilayer grain boundaries (GBs) in chemical‐vapor‐deposition‐grown large‐area graphene are identified using multispectral tip‐enhanced Raman imaging with 18 nm spatial resolution. The misorientation angle of the bilayer GBs is determined from a quantitative analysis of the phonon‐scattering properties associated with the modified electronic structure.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201603601