Characterization of chromium compensated GaAs as an X-ray sensor material for charge-integrating pixel array detectors

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and X-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied h...

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Bibliographic Details
Published in:Journal of instrumentation 2018-01, Vol.13 (1), p.P01007-P01007
Main Authors: Becker, J., Tate, M.W., Shanks, K.S., Philipp, H.T., Weiss, J.T., Purohit, P., Chamberlain, D., Gruner, S.M.
Format: Article
Language:English
Subjects:
Bias
Charge materials
Chromium
Circuits
Gallium arsenide
Instruments & Instrumentation
Pixels
Point spread functions
Sensor arrays
Sensors
Trapping
X ray tubes
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Summary:We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and X-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/13/01/P01007