Stress-dependence of kinetic transitions at atomistic defects

The full second-rank activation volume tensors associated with vacancy migration in FCC copper and HCP titanium as well as transition events in the 5 (2 1 0) grain boundary in copper are calculated and analyzed. The full tensorial results quantitatively illustrate how the conventional use of an acti...

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Published in:Modelling and simulation in materials science and engineering 2018-01, Vol.26 (1), p.15007
Main Authors: Ball, S L, Alexander, K C, Schuh, C A
Format: Article
Language:English
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activation volume
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
diffusion
grain boundaries
kinetics
MATERIALS SCIENCE
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Alexander, K C
Schuh, C A
description The full second-rank activation volume tensors associated with vacancy migration in FCC copper and HCP titanium as well as transition events in the 5 (2 1 0) grain boundary in copper are calculated and analyzed. The full tensorial results quantitatively illustrate how the conventional use of an activation volume scalar in atomistic studies of the kinetic processes of complex defects can miss important stress dependencies, in that neither hydrostatic pressure nor deviatoric stress dependencies can be considered alone as dominating the response. The results speak to the importance of anisotropies in the stress-dependence of atomistic kinetics, including crystal structure anisotropy, elastic anisotropy, and defect structure or migration-path anisotropies.
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subjects activation volume
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
diffusion
grain boundaries
kinetics
MATERIALS SCIENCE
title Stress-dependence of kinetic transitions at atomistic defects
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