High-Field Magnetoresistance of Organic Semiconductors

The magnetoelectronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge-carrier pairs due to small differences in their Landé g factors that arise from the weak spin-orbit coupling in the...

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Bibliographic Details
Published in:Physical review applied 2018-08, Vol.10 (2)
Main Authors: Joshi, G., Teferi, M. Y., Miller, R., Jamali, S., Groesbeck, M., van Tol, J., McLaughlin, R., Vardeny, Z. V., Lupton, J. M., Malissa, H., Boehme, C.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
electron spin resonance
magnetoresistance
optoelectronics
organic LEDs
organic semiconductors
organic sensors
physics
solid-state detectors
spin-orbit coupling
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Summary:The magnetoelectronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge-carrier pairs due to small differences in their Landé g factors that arise from the weak spin-orbit coupling in the material. In this work, we corroborate theoretical models for the high-field magnetoresistance of organic semiconductors, in particular of diodes made of the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) at low temperatures, by conducting magnetoresistance measurements along with multifrequency continuous-wave electrically detected magnetic-resonance experiments. The measurements are performed on identical devices under similar conditions in order to independently assess the magnetic-field-dependent spin-mixing mechanism, the so-called Δg mechanism. Finally, an understanding of the microscopic origin of magnetoresistance in organic semiconductors is crucial for developing reliable magnetometer devices capable of operating over a broad range of magnetic fields of order 10-7 - 10 T.
ISSN:2331-7019
2331-7019