Intrinsic shape of free carrier absorption spectra in 4H-SiC

Free carrier absorption spectra are measured along the different polarization directions with respect to the c-axis of 4H-SiC using ultrafast differential transmission spectroscopy. Probing of excited carrier spectra in an undoped material reveals intrinsic resonances within the conduction band. Wid...

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Published in:Journal of applied physics 2019-06, Vol.125 (22)
Main Authors: Grivickas, P., Redeckas, K., Gulbinas, K., Conway, A. M., Voss, L. F., Bora, M., Sampayan, S., Vengris, M., Grivickas, V.
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Language:English
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CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
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container_title Journal of applied physics
container_volume 125
creator Grivickas, P.
Redeckas, K.
Gulbinas, K.
Conway, A. M.
Voss, L. F.
Bora, M.
Sampayan, S.
Vengris, M.
Grivickas, V.
description Free carrier absorption spectra are measured along the different polarization directions with respect to the c-axis of 4H-SiC using ultrafast differential transmission spectroscopy. Probing of excited carrier spectra in an undoped material reveals intrinsic resonances within the conduction band. Widths of the detected resonance peaks are shown to be wider than their theoretical estimates and more comparable to the ones observed in a low doped material. Relative strength of the peaks, on the other hand, is shown to be nearly excitation independent in contrast to the doping induced absorption weakening for the same transitions in n-type samples. Finally, free carrier cross sections are extracted from the excitation dependency of the detected spectra and linked to the individual electron and hole contributions in the near infrared range.
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subjects CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
title Intrinsic shape of free carrier absorption spectra in 4H-SiC
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