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Stable and efficient CdS/Sb2Se3 solar cells prepared by scalable close space sublimation
Sb2Se3 is a promising candidate for low toxicity, low-cost and high efficiency solar cells. Thin film solar cells employing Sb2Se3 as the absorber have achieved power conversion efficiencies of up to 6.5%. However, these solar cells are typically fabricated using rapid thermal evaporation, a fast de...
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Published in: | Nano energy 2018-07, Vol.49 (C), p.346-353 |
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Main Authors: | , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Sb2Se3 is a promising candidate for low toxicity, low-cost and high efficiency solar cells. Thin film solar cells employing Sb2Se3 as the absorber have achieved power conversion efficiencies of up to 6.5%. However, these solar cells are typically fabricated using rapid thermal evaporation, a fast deposition technique but suffer from entangled substrate and source temperatures. Here, we report on the fabrication of stable and efficient CdS/Sb2Se3 thin film solar cells using close-space sublimation process, which allows separate control of the source and substrate temperatures. This enables better control of Sb2Se3 film deposition and reduction of interfacial diffusion, leading to higher quality absorber films and improved device heterojunctions. Additionally, we introduced a novel low-cost material 4,4',4'',4'''-(9-octylcarbazole-1,3,6,8-tetrayl)tetrakis(N,N-bis(4-methoxyphenyl)aniline) (CZ-TA) as the hole transport layer (HTL) to create n-i-p structured devices. This CZ-TA HTL reduced the back contact resistance and promoted photogenerated carrier collection, boosting device photo conversion efficiency to 6.84%.
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•Scalable and commercialized close-space sublimation process was firstly used in Sb2Se3 solar cell fabrication.•CdS/Sb2Se3 interfacial diffusion was greatly suppressed though precise temperature control, leading to stable solar cells.•CZ-TA as low cost HTL leads to reduced back contact resistance and promoted carrier collection, boosting device PCE to 6.84%. |
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ISSN: | 2211-2855 |
DOI: | 10.1016/j.nanoen.2018.04.044 |