Tailoring Vanadium Dioxide Film Orientation Using Nanosheets: a Combined Microscopy, Diffraction, Transport, and Soft X‐Ray in Transmission Study

Abstract Vanadium dioxide (VO 2 ) is a much‐discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of VO 2 is realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X‐ray transparent silicon nitr...

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Published in:Advanced functional materials 2019-10, Vol.30 (1)
Main Authors: Le, Phu Tran Phong, Hofhuis, Kevin, Rana, Abhimanyu, Huijben, Mark, Hilgenkamp, Hans, Rijnders, Guus A. J. H. M., ten Elshof, Johan E., Koster, Gertjan, Gauquelin, Nicolas, Lumbeeck, Gunnar, Schüßler‐Langeheine, Christian, Popescu, Horia, Fortuna, Franck, Smit, Steef, Verbeek, Xanthe H., Araizi‐Kanoutas, Georgios, Mishra, Shrawan, Vaskivskyi, Igor, Dürr, Hermann A., Golden, Mark S.
Format: Article
Language:English
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Summary:Abstract Vanadium dioxide (VO 2 ) is a much‐discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of VO 2 is realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X‐ray transparent silicon nitride membranes. The out‐of‐plane orientation of the VO 2 thin films is controlled at will between (011) M1 /(110) R and (−402) M1 /(002) R by coating the bulk substrates with Ti 0.87 O 2 and NbWO 6 nanosheets, respectively, prior to VO 2 growth. Temperature‐dependent X‐ray diffraction and automated crystal orientation mapping in microprobe transmission electron microscope mode (ACOM‐TEM) characterize the high phase purity, the crystallographic and orientational properties of the VO 2 films. Transport measurements and soft X‐ray absorption in transmission are used to probe the VO 2 metal–insulator transition, showing results of a quality equal to those from epitaxial films on bulk single‐crystal substrates. Successful local manipulation of two different VO 2 orientations on a single substrate is demonstrated using VO 2 grown on lithographically patterned lines of Ti 0.87 O 2 and NbWO 6 nanosheets investigated by electron backscatter diffraction. Finally, the excellent suitability of these nanosheet‐templated VO 2 films for advanced lensless imaging of the metal–insulator transition using coherent soft X‐rays is discussed.
ISSN:1616-301X
1616-3028