Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

This letter compares the measured electrical characteristics of 600 V planar-gate inversion-channel 4H-SiC power MOSFETs fabricated with four different cell topologies (Linear, Square, Hexagonal, and Octagonal) for the first time. The High-Frequency Figures-of-Merit (HF-FOMs) of these devices were c...

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Bibliographic Details
Published in:IEEE electron device letters 2019-05, Vol.40 (5), p.773-776
Main Authors: Agarwal, Aditi, Han, Kijeong, Baliga, B. Jayant
Format: Article
Language:English
Subjects:
4H-SiC
600 V
cell topologies
Cgd
Electric fields
Engineering
hexagonal layout
JFETs
linear layout
Logic gates
MOSFET
MOSFETs
octagonal layout
planar MOSFET
Qgd
Rₒₙ
Silicon
Silicon carbide
square layout
Topology
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Summary:This letter compares the measured electrical characteristics of 600 V planar-gate inversion-channel 4H-SiC power MOSFETs fabricated with four different cell topologies (Linear, Square, Hexagonal, and Octagonal) for the first time. The High-Frequency Figures-of-Merit (HF-FOMs) of these devices were compared with the commercially available SiC device and the Si CoolMOS product. It was found that the HF-FOMs of the 600-V SiC product and our fabricated conventional Linear cell device are much worse in comparison to the Si CoolMOS product. However, the 600 V SiC power MOSFET with comparable performance to the Si CoolMOS product could be achieved by using the Octagonal cell topology.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2908078