Effects of LaSiO x Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiO x

We report the effects of lanthanum-rich layer thickness and forming gas anneal (FGA) conditions on mobility and threshold voltage ([Formula Omitted]) instability of high-mobility 4H-SiC MOSFETs using lanthanum silicate (LaSiO x ) interface engineering. MOSFETs with LaSiO x after high-temperature FGA...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-01, Vol.66 (1), p.539-545
Main Authors: Yang, Xiangyu, Lee, Bongmook, Misra, Veena
Format: Article
Language:English
Subjects:
Annealing
Bias
Engineering
High temperature
Interface stability
Lanthanum
MOSFETs
Physics
Thickness
Threshold voltage
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Summary:We report the effects of lanthanum-rich layer thickness and forming gas anneal (FGA) conditions on mobility and threshold voltage ([Formula Omitted]) instability of high-mobility 4H-SiC MOSFETs using lanthanum silicate (LaSiO x ) interface engineering. MOSFETs with LaSiO x after high-temperature FGA show significantly improved [Formula Omitted] reliability under positive gate bias. It is found that both the thickness of the initial lanthanum-rich layer and the FGA temperature profoundly influence MOSFET mobility and [Formula Omitted] instability under positive bias. There is a tradeoff between mobility and [Formula Omitted] shift under positive bias.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2875094