III/V silicon hybrid laser based on a resonant Bragg structure

We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry-Perot resonator to form a passive bandpass filter within its stopband to enable...

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Bibliographic Details
Published in:Applied optics (2004) 2020-05, Vol.59 (13), p.4158
Main Authors: Davis, Jordan A, Kim, Myun Sik, El Amili, Abdelkrim, Trotter, Douglas C, Starbuck, Andrew L, Dallo, Christina, Pomerene, Andrew T, DeRose, Christopher T, Lentine, Anthony L, Fainman, Yeshaiahu
Format: Article
Language:English
Subjects:
Bandpass filters
Laser applications
Lasers
Semiconductor optical amplifiers
Semiconductors
Silicon
Single mode operation
Tunable lasers
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Summary:We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry-Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.
ISSN:1559-128X
2155-3165
DOI:10.1364/AO.390522