Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry

• Published in: Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2020-07, Vol.38 (4)
• Main Authors: Senevirathna, M. K. Indika, Vernon, Mark, Cooke, Graham A., Cross, Garnett B., Kozhanov, Alexander, Williams, Michael D.
• Format: Article
• Language: English
• ISSN: 2166-2746; 2166-2754
• DOI: 10.1116/6.0000138

The optimum detection levels that can be achieved by a secondary ion mass spectrometer are dependent on how efficiently a particular species of interest can be ionized and detected. One can determine in advance whether the analysis of a particular ion in the sample is possible, if the useful ion yield is known. The useful ion yield depends on the element, instrument transmission, the analytical conditions, the sample matrix, etc. The value of the useful ion yield for a species can diverge from one instrument type to another due to its different transmission and ionization probabilities. However, the same tendencies in the results may be expected for all types of instruments. In this paper, the authors present a quantitative secondary ion mass spectrometry analysis of the useful ion yield for the silicon dopant species in a gallium nitride matrix grown by metal organic chemical vapor deposition. Positively ionized cesium was used as the primary ion beam, and its energy was varied in the range from 0.5 to 5 kV. A quadrupole mass analyzer was utilized to collect secondary ion species of interest. The analysis results can be used to determine the primary beam energies for optimal Si sensitivity.