GaN thermal transport limited by the interplay of dislocations and size effects

Measurements and first-principles calculations probe the temperature-dependent thermal conductivity (k) of GaN films with large densities of highly oriented dislocations. We demonstrate that phonon-dislocation scattering is weaker than suggested by previous measurements, likely due to sample and exp...

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Bibliographic Details
Published in:Physical review. B 2020-07, Vol.102 (1), p.1, Article 014313
Main Authors: Li, H., Hanus, R., Polanco, C. A., Zeidler, A., Koblmüller, G., Koh, Y. K., Lindsay, L.
Format: Article
Language:English
Subjects:
Anisotropy
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Dislocation density
First principles
Size effects
Temperature dependence
Thermal conductivity
Thermal resistance
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Summary:Measurements and first-principles calculations probe the temperature-dependent thermal conductivity (k) of GaN films with large densities of highly oriented dislocations. We demonstrate that phonon-dislocation scattering is weaker than suggested by previous measurements, likely due to sample and experiment size effects. Nonetheless, dislocation-limited k is observed in samples with large dislocation densities and at lower temperatures where k anisotropy is also observed. Combination of experiment and theory give insights into the interplay of thermal resistance mechanisms limiting GaN functionalities and suggest pathways for tuning k via defect engineering.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.102.014313