High-Temperature Nucleation of GaP on V‑Grooved Si

The use of nanopatterned {111}-faceted v-grooves has recently shown promise for growing high-quality III–V material on Si. Here, we study the effect of reactor conditions and surface pretreatments on the nucleation of GaP on v-grooved Si in a high-temperature regime, which offers the promise of a de...

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Bibliographic Details
Published in:Crystal growth & design 2020-10, Vol.20 (10), p.6745-6751
Main Authors: Saenz, Theresa E, McMahon, William E, Norman, Andrew G, Perkins, Craig L, Zimmerman, Jeramy D, Warren, Emily L
Format: Article
Language:English
Subjects:
GaP on Si
III-V heteroepitaxy
MATERIALS SCIENCE
nanopatterning
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Summary:The use of nanopatterned {111}-faceted v-grooves has recently shown promise for growing high-quality III–V material on Si. Here, we study the effect of reactor conditions and surface pretreatments on the nucleation of GaP on v-grooved Si in a high-temperature regime, which offers the promise of a defect-free GaP/Si interface favorable for Si passivation and dislocation glide in the GaP. X-ray photoelectron spectroscopy was used to understand the Si surface chemistry prior to nucleation, and transmission electron microscopy was used to probe material quality of the nuclei. Temperature and V/III ratio were found to control the facet selectivity of nucleation. We demonstrate a condition of high temperature and high V–III ratio that leads to uniform nucleation at the bottom of the trenches, with initial material free of nucleation-related interfacial defects. This optimized condition was then shown to coalesce into a thin film after additional growth.
ISSN:1528-7483
1528-7505
DOI:10.1021/acs.cgd.0c00875