Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al x Ga 1− x N-based deep-ultraviolet laser-diode heterostructures where x  = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF)...

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Bibliographic Details
Published in:Journal of electronic materials 2009-04, Vol.38 (4), p.533-537
Main Authors: Miller, M.A., Crawford, M.H., Allerman, A.A., Cross, K.C., Banas, M.A., Shul, R.J., Stevens, J., Bogart, K.H.A.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Diodes
Electronics and Microelectronics
Gallium nitride epitaxy
Instrumentation
Lasers
Materials Science
Optical and Electronic Materials
Plasma etching
Semiconductors
Solid State Physics
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Summary:Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al x Ga 1− x N-based deep-ultraviolet laser-diode heterostructures where x  = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF) power to achieve a facet angle of 5 deg from vertical. Subsequent etching in AZ400K developer was investigated to reduce the facet surface roughness and improve facet verticality. The resulting combined processes produced improved facet sidewalls with an average angle of 0.7 deg from vertical and less than 2-nm root-mean-square (RMS) roughness, yielding an estimated reflectivity greater than 95% of that of a perfectly smooth and vertical facet.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-009-0670-1