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Synthesis and Crystallization of Atomic Layer Deposition β‑Eucryptite LiAlSiO4 Thin-Film Solid Electrolytes

Atomic layer deposition (ALD) was used to control the stoichiometry of thin lithium aluminosilicate films, thereby enabling crystallization into the ion-conducting β-eucryptite LiAlSiO4 phase. The rapid thermal annealed ALD film developed a well-defined epitaxial relationship to the silicon substrat...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2020-12, Vol.12 (51), p.56935-56942
Main Authors: Sheil, Ryan, Perng, Ya-Chuan, Mars, Julian, Cho, Jea, Dunn, Bruce, Toney, Michael F, Chang, Jane P
Format: Article
Language:English
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Summary:Atomic layer deposition (ALD) was used to control the stoichiometry of thin lithium aluminosilicate films, thereby enabling crystallization into the ion-conducting β-eucryptite LiAlSiO4 phase. The rapid thermal annealed ALD film developed a well-defined epitaxial relationship to the silicon substrate: β-LiAlSiO4 (12̅10)||Si (100) and β-LiAlSiO4 (101̅0)||Si (001). The extrapolated room temperature ionic conductivity was found to be 1.2 × 10–7 S/cm in the [12̅10] direction. Because of the unique 1-D channel along the c axis of β-LiAlSiO4, the epitaxial thin film has the potential to facilitate ionic transport if oriented with the c axis normal to the electrode surface, making it a promising electrolyte material for three-dimensional lithium-ion microbatteries.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.0c11614