High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1  µm

Stable high-power narrow-linewidth operation of the 2.05-2.1 µm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 µm wide ridge waveguides generated ∼850 in the continuous wave (CW) regime at...

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Bibliographic Details
Published in:Optics letters 2021-04, Vol.46 (8), p.1967-1970
Main Authors: Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Belyanin, Alexey, Belenky, Gregory
Format: Article
Language:English
Subjects:
Continuous radiation
DBR lasers
Rollover
Semiconductor lasers
Waveguides
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Summary:Stable high-power narrow-linewidth operation of the 2.05-2.1 µm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 µm wide ridge waveguides generated ∼850 in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrum was defined by Bragg reflector reflectivity at all operating currents in a wide temperature range. The devices operated at DBR line with detuning from gain peak exceeding 10 meV.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.422536