High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1  µm

Stable high-power narrow-linewidth operation of the 2.05-2.1 µm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 µm wide ridge waveguides generated ∼850 in the continuous wave (CW) regime at...

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Published in:Optics letters 2021-04, Vol.46 (8), p.1967-1970
Main Authors: Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Belyanin, Alexey, Belenky, Gregory
Format: Article
Language:English
Subjects:
Continuous radiation
DBR lasers
Rollover
Semiconductor lasers
Waveguides
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cited_by cdi_FETCH-LOGICAL-c2206-c8c448518e49d83dbc432cf00988e48d9ef4ac97a9c328dc982014a7a74c9b83
cites cdi_FETCH-LOGICAL-c2206-c8c448518e49d83dbc432cf00988e48d9ef4ac97a9c328dc982014a7a74c9b83
container_end_page 1970
container_issue 8
container_start_page 1967
container_title Optics letters
container_volume 46
creator Jiang, Jiang
Shterengas, Leon
Kipshidze, Gela
Stein, Aaron
Belyanin, Alexey
Belenky, Gregory
description Stable high-power narrow-linewidth operation of the 2.05-2.1 µm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 µm wide ridge waveguides generated ∼850 in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrum was defined by Bragg reflector reflectivity at all operating currents in a wide temperature range. The devices operated at DBR line with detuning from gain peak exceeding 10 meV.
doi_str_mv 10.1364/OL.422536
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source Optica Publishing Group Journals
subjects Continuous radiation
DBR lasers
Rollover
Semiconductor lasers
Waveguides
title High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1  µm
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