Hybrid BaTiO 3 /SiN x /AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance

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Published in:Applied physics letters 2021-07, Vol.119 (1)
Main Authors: Rahman, Mohammad Wahidur, Chandrasekar, Hareesh, Razzak, Towhidur, Lee, Hyunsoo, Rajan, Siddharth
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container_title Applied physics letters
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creator Rahman, Mohammad Wahidur
Chandrasekar, Hareesh
Razzak, Towhidur
Lee, Hyunsoo
Rajan, Siddharth
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source American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title Hybrid BaTiO 3 /SiN x /AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance
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